Indium Arsenide Wafer, Inas Wafer
Min. Order: | 1 Piece |
---|---|
Port: | Shanghai, China |
Payment Terms: | L/C, T/T, D/P, Western Union, Paypal, Money Gram |
Product Description
Company Info
Product Description
Indium Arsenide Wafer
InAs single crystal can be used as a substrate material to produce InAsSb/InAsPSb materials to fabricate an infrared light-emitting device. It has good application prospects in the field of gas detection and low loss fiber communication. Besides, the InAs crystal is the ideal material to manufacture the Hall device because of its high electron mobility.
Indium Arsenide Wafer Physical Properties
Material | InAs | |||
---|---|---|---|---|
Growth Method | LEC | |||
Lattice (A) | a=6.058 | |||
Structure | M3 | |||
Melting Point | 942ºC | |||
Density(g/cm3) | 5.66 g/cm3 | |||
Doped Material | undoped | Sn-doped | S-doped | Zn-doped |
Type | N | N | N | P |
Carrier Concentration (cm-3) | 5 x 1016 | (5-20) x 1017 | (1-10) x 1017 | (1-10) x 1018 |
Mobility (cm2v-1s-1) | ≥ 2 x 104 | 7000-20000 | 6000-20000 | 100-400 |
EPD (Average) | <5 x 104/cm2 | <5 x 104/cm2 | <5 x 104/cm2 | <5 x 104/cm2 |
Indium Arsenide Wafer Specifications
Size | 2'' Dia, 3'' Dia, 4'' Dia (customized sizes are available) | ||
---|---|---|---|
Thickness | 500um, 600um, 800um (Tolerance: ±25um) | ||
Polished | SSP or DSP | ||
Orientation | <100>, <111> | ||
Redirection Precision | ±0.5° | ||
Primary Flat Length | 16±2 mm, 22±2 mm, 32.5±2 mm | ||
Scondary Flat Length | 8±1 mm, 11±1 mm, 18±1 mm | ||
TTV | <10 um | ||
Bow | <10 um | ||
Warp | <15 um |
Indium Arsenide Wafer Package
Packaged with class 100 clean bag or wafer container in a class 1000 clean room.Related Products of Indium Arsenide Wafer
Superconducting Substrates Yttrium Orthoaluminate Substrate Magnesium Aluminate (Spinel) Substrate LaAlO3 Substrate Magnesium Oxide Wafer Strontium Titanate Substrate LSAT Substrate YSZ Substrate Neodymium Gallate Substrate Potassium Tantalate Substrate LaSrAlO4 Substrate | Magnetic Ferroelectricity Substrates Gadolinium Gallium Garnet Substrate Terbium Gallium Garnet Substrate Neodymium Doped Strontium Titanate Substrate Ferrum Doped Strontium Titanate Substrate Niobium Doped Strontium Titanate Substrate Sapphire Wafer Rutile Substrate | Semiconductor Wafers Germanium Wafer Silicon Wafer Indium Arsenide Wafer Gallium Arsenide Wafer Gallium Antimonide Wafer Indium Phosphide Wafer Thermal Oxide Silicon Wafer |
GaN Thin Film Substrates Gallium Nitride Wafer ScAlMgO4 Substrate Lithium Aluminate Substrate Silicon Carbide Wafer Zinc Oxide Substrate Magnesium Aluminate Substrate | Halide Substrates Potassium Bromide Substrate Potassium Chloride Substrate Sodium Chloride Substrate | Ceramic Substrates Alumina Ceramic Substrate Aluminum Nitride Ceramic Substrate Zirconia Ceramic Substrate Silicon Nitride Ceramic Substrate Metal Substrates Copper Substrate Aluminum Substrate |
Address:
Rm. 408, Building 1, No. 31, Yinshan Road Yuelu District, Changsha, Hunan, China
Business Type:
Manufacturer/Factory
Business Range:
Chemicals, Manufacturing & Processing Machinery
Management System Certification:
ISO 9001, ISO 9000
Main Products:
Sputtering Target, Evaporation Material, Crucibles, Evaporation Boats, Thermal Filament, Thin Film Substrate, Crytstal Material, Powder
Company Introduction:
Changsha Advanced Engineering Materials Limited (AEM) is an international company involved in the R & D, manufacturing and sales of all kinds of high-tech materials. We provide worldwide research institutes and high-tech enterprises with high purity non-ferrous materials, customized alloys, compounds and almost every kind of complicated synthetic material, etc. We have great advantages in magnetron sputtering targets, vacuum coating materials, high-purity metals, high-purity compounds, rare-earth metals, distilled rare-earth metals, coated substrates, etc.