Indium Arsenide Wafer, Inas Wafer

Min. Order: 1 Piece
Port: Shanghai, China
Payment Terms: L/C, T/T, D/P, Western Union, Paypal, Money Gram
Indium Arsenide Wafer, Inas Wafer

Product Description

Company Info

Product Description

Indium Arsenide Wafer 

InAs single crystal can be used as a substrate material to produce InAsSb/InAsPSb materials to fabricate an infrared light-emitting device. It has good application prospects in the field of gas detection and low loss fiber communication. Besides, the InAs crystal is the ideal material to manufacture the Hall device because of its high electron mobility.

Indium Arsenide Wafer Physical Properties

MaterialInAs
Growth MethodLEC
Lattice (A)a=6.058
StructureM3
Melting Point942ºC
Density(g/cm3)5.66 g/cm3
Doped Materialundoped Sn-dopedS-dopedZn-doped
TypeNNNP
Carrier Concentration (cm-3)5 x 1016(5-20) x 1017(1-10) x 1017(1-10) x 1018
Mobility (cm2v-1s-1)≥ 2 x 1047000-200006000-20000100-400
EPD (Average)<5 x 104/cm2<5 x 104/cm2<5 x 104/cm2<5 x 104/cm2

Indium Arsenide Wafer Specifications

Size2'' Dia, 3'' Dia, 4'' Dia (customized sizes are available)
Thickness500um, 600um, 800um (Tolerance: ±25um)
PolishedSSP or DSP
Orientation<100>, <111>
Redirection Precision±0.5°
Primary Flat Length16±2 mm, 22±2 mm, 32.5±2 mm
Scondary Flat Length 8±1 mm, 11±1 mm, 18±1 mm
TTV<10 um  
Bow<10 um  
Warp<15 um  

Indium Arsenide Wafer Package

Packaged with class 100 clean bag or wafer container in a class 1000 clean room.

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Address: Rm. 408, Building 1, No. 31, Yinshan Road Yuelu District, Changsha, Hunan, China
Business Type: Manufacturer/Factory
Business Range: Chemicals, Manufacturing & Processing Machinery
Management System Certification: ISO 9001, ISO 9000
Company Introduction: Changsha Advanced Engineering Materials Limited (AEM) is an international company involved in the R & D, manufacturing and sales of all kinds of high-tech materials. We provide worldwide research institutes and high-tech enterprises with high purity non-ferrous materials, customized alloys, compounds and almost every kind of complicated synthetic material, etc. We have great advantages in magnetron sputtering targets, vacuum coating materials, high-purity metals, high-purity compounds, rare-earth metals, distilled rare-earth metals, coated substrates, etc.
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