Basic Info.
Transport Package
Cleaning and Final Packaging - Cleaned for Use in
Product Description
Material Type | Silicon |
Symbol | Si |
Atomic Weight | 28.0855 |
Atomic Number | 14 |
Color/Appearance | Dark Gray with a Bluish Tinge, Semi-Metallic |
Thermal Conductivity | 150 W/m.K |
Melting Point (°C) | 1,410 |
Bulk Resistivity | >1 OHM-CM, 0.005-0.020 OHM-CM, <0.1 OHM-CM |
Coefficient of Thermal Expansion | 2.6 x 10-6/K |
Theoretical Density (g/cc) | 2.32 |
Dopant | Undoped, Boron, Phosphorous or Antimony |
Z Ratio | 0.712 |
Sputter | RF |
Max Power Density* (Watts/Square Inch) | 20 |
Type of Bond | Indium, Elastomer |
Comments | Alloys with W; use heavy W boat. SiO produced. |
Silicon Sputtering Targets
Silicon is a solid at room temperature, with a melting point of 1,414 °C (2,577 °F) and a boiling point of 3,265 °C (5,909 °F). Like water, it has a greater density in a liquid state than in a solid-state, and it expands when it freezes, unlike most other substances. With a relatively high thermal conductivity of 149 Wm-1K-1, silicon conducts heat well. Silicon sputtering targets are mainly used in reactive magnetron sputtering to deposit dielectric layers, such as SiO2 and SiN. As an essential functional film material, they have good hardness, optical, dielectric properties, and wear resistance. Si targets' corrosion resistance has broad application prospects in optical and microelectronics fields and is currently widely used as functional materials globally. Now, it is mainly used for LCD transparent conductive glass, architectural LOW-E glass, and the microelectronics industry. The silicon sputtering targets can be divided into two types: single crystal and polycrystalline. We produce planar silicon sputtering targets through the Czochralski crystal growth method.
Silicon Sputtering Targets Information
Silicon Sputtering Targets
Purity: 99.99%, 99.999%;
Relative density: ≥ 95%;
Conductivity type: P-type & N-type;
Circular: Diameter <= 14 inch, Thickness >= 1mm;
Block: Length <= 32 inch, Width <= 12 inch, Thickness >= 1mm;
Targets type: Planar sputtering target, Rotary sputtering target.
Bonding is recommended for these materials. Many materials have characteristics that are not amenable to sputtering, such as brittleness and low thermal conductivity. This material may require a special ramp up and ramp down procedures. This process may not be necessary for other materials. Targets that have low thermal conductivity are susceptible to thermal shock.
More Information on Silicon Sputtering Targets
Applications• Optical and decoration coating • Semiconductor and thin film solar energy • Flat panel displays | Features• Competitive pricing • High purity • Grain refined, Engineered microstructure • Semiconductor grade |
Manufacturing Process• Refining Three-layer electrolytic process • Melting and casting Electrical resistance furnace - Semi-continuous casting • Grain refinement Thermomechanical treatment • Cleaning and final packaging - Cleaned for use in vacuum Protection from environmental contaminants Protection during shipment | Options• 99.99% minimum purity • Semiconductor grade silicon alloys available Al/Si, Al/Cu/Si • Smaller sizes also available for R&D applications • Sputtering target bonding service |
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Address:
Rm. 408, Building 1, No. 31, Yinshan Road Yuelu District, Changsha, Hunan, China
Business Type:
Manufacturer/Factory
Business Range:
Chemicals, Manufacturing & Processing Machinery
Management System Certification:
ISO 9001, ISO 9000
Company Introduction:
Changsha Advanced Engineering Materials Limited (AEM) is an international company involved in the R & D, manufacturing and sales of all kinds of high-tech materials. We provide worldwide research institutes and high-tech enterprises with high purity non-ferrous materials, customized alloys, compounds and almost every kind of complicated synthetic material, etc. We have great advantages in magnetron sputtering targets, vacuum coating materials, high-purity metals, high-purity compounds, rare-earth metals, distilled rare-earth metals, coated substrates, etc.